Investigation of boron diffusion in polysilicon and its application to the design of pnp polysilicon emitter bipolar transistors with shallow emitter junctions


Post, I R C and Ashburn, Peter (1991) Investigation of boron diffusion in polysilicon and its application to the design of pnp polysilicon emitter bipolar transistors with shallow emitter junctions

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Item Type: Other
Organisations: Nanoelectronics and Nanotechnology
ePrint ID: 251198
Date :
Date Event
1991Published
Date Deposited: 19 Oct 1999
Last Modified: 17 Apr 2017 23:44
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/251198

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