Effects of rapid thermal processing on the current gain and emitter resistance of polysilicon emitter bipolar transistors
Effects of rapid thermal processing on the current gain and emitter resistance of polysilicon emitter bipolar transistors
Castaner, L M
ff3ea888-9b1a-40bb-929b-c130f126cef1
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Wolstenholme, G R
d0b32601-69d1-46d7-9228-5efedb7fb2c5
1991
Castaner, L M
ff3ea888-9b1a-40bb-929b-c130f126cef1
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Wolstenholme, G R
d0b32601-69d1-46d7-9228-5efedb7fb2c5
Castaner, L M, Ashburn, P and Wolstenholme, G R
(1991)
Effects of rapid thermal processing on the current gain and emitter resistance of polysilicon emitter bipolar transistors.
This record has no associated files available for download.
More information
Published date: 1991
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 251199
URI: http://eprints.soton.ac.uk/id/eprint/251199
PURE UUID: 5d18cc22-5639-49a5-87d6-2929cc53eb31
Catalogue record
Date deposited: 19 Oct 1999
Last modified: 10 Dec 2021 20:20
Export record
Contributors
Author:
L M Castaner
Author:
G R Wolstenholme
Download statistics
Downloads from ePrints over the past year. Other digital versions may also be available to download e.g. from the publisher's website.
View more statistics