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Effects of rapid thermal processing on the current gain and emitter resistance of polysilicon emitter bipolar transistors

Effects of rapid thermal processing on the current gain and emitter resistance of polysilicon emitter bipolar transistors
Effects of rapid thermal processing on the current gain and emitter resistance of polysilicon emitter bipolar transistors
Castaner, L M
ff3ea888-9b1a-40bb-929b-c130f126cef1
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Wolstenholme, G R
d0b32601-69d1-46d7-9228-5efedb7fb2c5
Castaner, L M
ff3ea888-9b1a-40bb-929b-c130f126cef1
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Wolstenholme, G R
d0b32601-69d1-46d7-9228-5efedb7fb2c5

Castaner, L M, Ashburn, P and Wolstenholme, G R (1991) Effects of rapid thermal processing on the current gain and emitter resistance of polysilicon emitter bipolar transistors.

Record type: Other

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More information

Published date: 1991
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 251199
URI: https://eprints.soton.ac.uk/id/eprint/251199
PURE UUID: 5d18cc22-5639-49a5-87d6-2929cc53eb31

Catalogue record

Date deposited: 19 Oct 1999
Last modified: 18 Jul 2017 10:11

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