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Effects of rapid thermal processing on the current gain and emitter resistance of polysilicon emitter bipolar transistors

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Citation

Castaner, L M, Ashburn, P and Wolstenholme, G R (1991) Effects of rapid thermal processing on the current gain and emitter resistance of polysilicon emitter bipolar transistors

More information

Published date: 1991
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 251199
URI: http://eprints.soton.ac.uk/id/eprint/251199
PURE UUID: 5d18cc22-5639-49a5-87d6-2929cc53eb31

Catalogue record

Date deposited: 19 Oct 1999
Last modified: 18 Jul 2017 10:11

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Contributors

Author: L M Castaner
Author: P Ashburn
Author: G R Wolstenholme

University divisions


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