Study of thin oxide tunnel parameters for polysilicon emitters using computer simulation and experimental results
Study of thin oxide tunnel parameters for polysilicon emitters using computer simulation and experimental results
Roulston, D J
291ffd2a-77e1-424c-913c-79659b9fca7d
Gold, D P
338ff08f-b5e2-4531-be0c-db3ef89ee464
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Booker, G R
1c5cd067-0dc6-4cd7-9e2c-9adf8ae291e9
1990
Roulston, D J
291ffd2a-77e1-424c-913c-79659b9fca7d
Gold, D P
338ff08f-b5e2-4531-be0c-db3ef89ee464
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Booker, G R
1c5cd067-0dc6-4cd7-9e2c-9adf8ae291e9
Roulston, D J, Gold, D P, Ashburn, P and Booker, G R
(1990)
Study of thin oxide tunnel parameters for polysilicon emitters using computer simulation and experimental results.
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Published date: 1990
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 251201
URI: http://eprints.soton.ac.uk/id/eprint/251201
PURE UUID: 625d1b5c-a92d-4af3-ae21-06943c185ef7
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Date deposited: 19 Oct 1999
Last modified: 10 Dec 2021 20:21
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Contributors
Author:
D J Roulston
Author:
D P Gold
Author:
G R Booker
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