Post, IRC and Ashburn, P (1990) Electrical method for measuring the emitter depth of shallow bipolar transistors.
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Published date: 1990
Organisations:
Nanoelectronics and Nanotechnology
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Local EPrints ID: 251831
URI: http://eprints.soton.ac.uk/id/eprint/251831
PURE UUID: 3dc75e81-c73f-4878-92d2-146a98a0fea7
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Date deposited: 09 Nov 1999
Last modified: 10 Dec 2021 20:23
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