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Electrical method for measuring the emitter depth of shallow bipolar transistors

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Citation

Post, IRC and Ashburn, P (1990) Electrical method for measuring the emitter depth of shallow bipolar transistors

More information

Published date: 1990
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 251831
URI: http://eprints.soton.ac.uk/id/eprint/251831
PURE UUID: 3dc75e81-c73f-4878-92d2-146a98a0fea7

Catalogue record

Date deposited: 09 Nov 1999
Last modified: 18 Jul 2017 10:08

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Contributors

Author: IRC Post
Author: P Ashburn

University divisions


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