Comparison of silicon bipolar and GaAlAs'GaAs heterojunction bipolar technologies using a propagation delay expression
Comparison of silicon bipolar and GaAlAs'GaAs heterojunction bipolar technologies using a propagation delay expression
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Rezazadeh, A A
23167ca0-a461-4ba6-bfe6-5ec47b13ad20
Chor, EF
03643d4d-e6a5-4737-b22a-e7b38c98ef9d
Brunnschweiler, A
2d39ef7c-b95e-476c-b435-316b6618a565
1989
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Rezazadeh, A A
23167ca0-a461-4ba6-bfe6-5ec47b13ad20
Chor, EF
03643d4d-e6a5-4737-b22a-e7b38c98ef9d
Brunnschweiler, A
2d39ef7c-b95e-476c-b435-316b6618a565
Ashburn, P, Rezazadeh, A A, Chor, EF and Brunnschweiler, A
(1989)
Comparison of silicon bipolar and GaAlAs'GaAs heterojunction bipolar technologies using a propagation delay expression.
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Published date: 1989
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 251834
URI: http://eprints.soton.ac.uk/id/eprint/251834
PURE UUID: 5f356728-358e-438b-a221-c18e6aaf1499
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Date deposited: 09 Nov 1999
Last modified: 10 Dec 2021 20:23
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Contributors
Author:
A A Rezazadeh
Author:
EF Chor
Author:
A Brunnschweiler
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