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Comparison of silicon bipolar and GaAlAs'GaAs heterojunction bipolar technologies using a propagation delay expression

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Citation

Ashburn, P, Rezazadeh, A A, Chor, EF and Brunnschweiler, A (1989) Comparison of silicon bipolar and GaAlAs'GaAs heterojunction bipolar technologies using a propagation delay expression

More information

Published date: 1989
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 251834
URI: http://eprints.soton.ac.uk/id/eprint/251834
PURE UUID: 5f356728-358e-438b-a221-c18e6aaf1499

Catalogue record

Date deposited: 09 Nov 1999
Last modified: 18 Jul 2017 10:08

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Contributors

Author: P Ashburn
Author: A A Rezazadeh
Author: EF Chor
Author: A Brunnschweiler

University divisions


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