Measurement and modelling of the emitter resistance of polysilicon emitter bipolar transistors
Measurement and modelling of the emitter resistance of polysilicon emitter bipolar transistors
Wolstenholme, G R
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Ashburn, P
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Jorgensen, N
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Gold, D
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RBooker, G
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1988
Wolstenholme, G R
d0b32601-69d1-46d7-9228-5efedb7fb2c5
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Jorgensen, N
ee67b541-1901-4429-86c8-9a4d070c702d
Gold, D
c3492c2f-ea7e-4f9f-a3e4-1369d96cebd5
RBooker, G
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Wolstenholme, G R, Ashburn, P, Jorgensen, N, Gold, D and RBooker, G
(1988)
Measurement and modelling of the emitter resistance of polysilicon emitter bipolar transistors.
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Published date: 1988
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 251838
URI: http://eprints.soton.ac.uk/id/eprint/251838
PURE UUID: 589c3262-889e-4bfa-8baf-c54881a2a424
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Date deposited: 11 Nov 1999
Last modified: 01 Mar 2024 17:53
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Contributors
Author:
G R Wolstenholme
Author:
N Jorgensen
Author:
D Gold
Author:
G RBooker
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