Ashburn, P, Rezazadeh, A A, Chor, E F and Brunnschweiler, A (1988) Use of a gate delay expression to compare self-aligned silicon bipolar and AlGaAs/GaAs heterojunction bipolar technologies.
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Published date: 1988
Organisations:
Nanoelectronics and Nanotechnology
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Local EPrints ID: 251860
URI: http://eprints.soton.ac.uk/id/eprint/251860
PURE UUID: d376d4ec-ff6a-479b-b00d-8af6707e1aa4
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Date deposited: 12 Nov 1999
Last modified: 10 Dec 2021 20:23
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