Comparison of experimental and computed results on arsenic and phosphorus doped polysilicon emitter bipolar transistors
Comparison of experimental and computed results on arsenic and phosphorus doped polysilicon emitter bipolar transistors
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Roulston, D J
291ffd2a-77e1-424c-913c-79659b9fca7d
Selvakumar, C R
7bfa3c7d-6de9-441e-95b6-eca678f255a0
1987
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Roulston, D J
291ffd2a-77e1-424c-913c-79659b9fca7d
Selvakumar, C R
7bfa3c7d-6de9-441e-95b6-eca678f255a0
Ashburn, P, Roulston, D J and Selvakumar, C R
(1987)
Comparison of experimental and computed results on arsenic and phosphorus doped polysilicon emitter bipolar transistors.
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Published date: 1987
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 251864
URI: http://eprints.soton.ac.uk/id/eprint/251864
PURE UUID: 05a4bb36-17b7-4c11-b63b-a4329a032403
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Date deposited: 15 Nov 1999
Last modified: 10 Dec 2021 20:23
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Contributors
Author:
D J Roulston
Author:
C R Selvakumar
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