Comparison of silicon bipolar and GaAs/GaAlAs heterojunction bipolar technologies for high-speed ECL circuits
Comparison of silicon bipolar and GaAs/GaAlAs heterojunction bipolar technologies for high-speed ECL circuits
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Rezazadeh, A A
23167ca0-a461-4ba6-bfe6-5ec47b13ad20
Chor, E F
66328b6e-8b0f-412e-b94c-8d858baf222d
Brunnschweiler, A
2d39ef7c-b95e-476c-b435-316b6618a565
1987
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Rezazadeh, A A
23167ca0-a461-4ba6-bfe6-5ec47b13ad20
Chor, E F
66328b6e-8b0f-412e-b94c-8d858baf222d
Brunnschweiler, A
2d39ef7c-b95e-476c-b435-316b6618a565
Ashburn, P, Rezazadeh, A A, Chor, E F and Brunnschweiler, A
(1987)
Comparison of silicon bipolar and GaAs/GaAlAs heterojunction bipolar technologies for high-speed ECL circuits.
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Published date: 1987
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 251866
URI: http://eprints.soton.ac.uk/id/eprint/251866
PURE UUID: 2b040908-17e0-4f45-a52e-c5eaab030f18
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Date deposited: 15 Nov 1999
Last modified: 10 Dec 2021 20:23
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Contributors
Author:
A A Rezazadeh
Author:
E F Chor
Author:
A Brunnschweiler
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