Emitter resistance of arsenic and phosphorus doped polysilicon emitter transistors
Emitter resistance of arsenic and phosphorus doped polysilicon emitter transistors
Chor, E F
66328b6e-8b0f-412e-b94c-8d858baf222d
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Brunnschweiler, A
2d39ef7c-b95e-476c-b435-316b6618a565
1985
Chor, E F
66328b6e-8b0f-412e-b94c-8d858baf222d
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Brunnschweiler, A
2d39ef7c-b95e-476c-b435-316b6618a565
Chor, E F, Ashburn, P and Brunnschweiler, A
(1985)
Emitter resistance of arsenic and phosphorus doped polysilicon emitter transistors.
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Published date: 1985
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 251867
URI: http://eprints.soton.ac.uk/id/eprint/251867
PURE UUID: 705c7caa-cc3f-4498-b5eb-72d7b918be3f
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Date deposited: 15 Nov 1999
Last modified: 10 Dec 2021 20:23
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Contributors
Author:
E F Chor
Author:
A Brunnschweiler
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