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Emitter resistance of arsenic and phosphorus doped polysilicon emitter transistors

Emitter resistance of arsenic and phosphorus doped polysilicon emitter transistors
Emitter resistance of arsenic and phosphorus doped polysilicon emitter transistors
Chor, E F
66328b6e-8b0f-412e-b94c-8d858baf222d
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Brunnschweiler, A
2d39ef7c-b95e-476c-b435-316b6618a565
Chor, E F
66328b6e-8b0f-412e-b94c-8d858baf222d
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Brunnschweiler, A
2d39ef7c-b95e-476c-b435-316b6618a565

Chor, E F, Ashburn, P and Brunnschweiler, A (1985) Emitter resistance of arsenic and phosphorus doped polysilicon emitter transistors.

Record type: Other

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More information

Published date: 1985
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 251867
URI: https://eprints.soton.ac.uk/id/eprint/251867
PURE UUID: 705c7caa-cc3f-4498-b5eb-72d7b918be3f

Catalogue record

Date deposited: 15 Nov 1999
Last modified: 04 Dec 2017 17:32

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Contributors

Author: E F Chor
Author: P Ashburn
Author: A Brunnschweiler

University divisions

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