An investigation of the trade-off between gain and base doping in polysilicon emitter bipolar transistors

Cuthbertson, A and Ashburn, P (1985) An investigation of the trade-off between gain and base doping in polysilicon emitter bipolar transistors.

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Published date: 1985

Organisations: Nanoelectronics and Nanotechnology

Local EPrints ID: 251868

URI: http://eprints.soton.ac.uk/id/eprint/251868

PURE UUID: c15c6de8-c91e-4a13-b637-7f6499817ace

Date deposited: 15 Nov 1999

Last modified: 10 Dec 2021 20:23

Author: A Cuthbertson

Author: P Ashburn

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