TEM investigation of the effect of anneal temperature and arsenic concentration on the polysilicon/thin oxide/single-crystal silicon emitter of a new high-performance bipolar transistor


Jorgensen, N, Barry, J C, Booker, G R, Ashburn, P, Wolstenholme, G R, Wilson, M C and Hunt, P C (1985) TEM investigation of the effect of anneal temperature and arsenic concentration on the polysilicon/thin oxide/single-crystal silicon emitter of a new high-performance bipolar transistor

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Item Type: Other
Organisations: Nanoelectronics and Nanotechnology
ePrint ID: 251895
Date :
Date Event
1985Published
Date Deposited: 16 Nov 1999
Last Modified: 17 Apr 2017 23:40
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/251895

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