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TEM investigation of the effect of anneal temperature and arsenic concentration on the polysilicon/thin oxide/single-crystal silicon emitter of a new high-performance bipolar transistor

TEM investigation of the effect of anneal temperature and arsenic concentration on the polysilicon/thin oxide/single-crystal silicon emitter of a new high-performance bipolar transistor
TEM investigation of the effect of anneal temperature and arsenic concentration on the polysilicon/thin oxide/single-crystal silicon emitter of a new high-performance bipolar transistor
Jorgensen, N
ee67b541-1901-4429-86c8-9a4d070c702d
Barry, J C
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Booker, G R
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Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Wolstenholme, G R
d0b32601-69d1-46d7-9228-5efedb7fb2c5
Wilson, M C
16749cec-b835-4c7d-a754-4d5b4138bdb9
Hunt, P C
785cc195-2197-4dab-8a2e-410742c3171c
Jorgensen, N
ee67b541-1901-4429-86c8-9a4d070c702d
Barry, J C
972d798d-dbd2-4453-99b7-b79a0cf294ea
Booker, G R
1c5cd067-0dc6-4cd7-9e2c-9adf8ae291e9
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Wolstenholme, G R
d0b32601-69d1-46d7-9228-5efedb7fb2c5
Wilson, M C
16749cec-b835-4c7d-a754-4d5b4138bdb9
Hunt, P C
785cc195-2197-4dab-8a2e-410742c3171c

Jorgensen, N, Barry, J C, Booker, G R, Ashburn, P, Wolstenholme, G R, Wilson, M C and Hunt, P C (1985) TEM investigation of the effect of anneal temperature and arsenic concentration on the polysilicon/thin oxide/single-crystal silicon emitter of a new high-performance bipolar transistor.

Record type: Other

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More information

Published date: 1985
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 251895
URI: https://eprints.soton.ac.uk/id/eprint/251895
PURE UUID: 8e4757c0-f5b9-426e-a724-e3262cd53408

Catalogue record

Date deposited: 16 Nov 1999
Last modified: 18 Jul 2017 10:08

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Contributors

Author: N Jorgensen
Author: J C Barry
Author: G R Booker
Author: P Ashburn
Author: G R Wolstenholme
Author: M C Wilson
Author: P C Hunt

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