Champ, P, Cowern, N E B, Godfrey, D J, Willoughby, A F and Evans, A G R (1986) A model for boron diffusion in p+, n+ and lightly doped silicon.
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Published date: September 1986
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 252031
URI: http://eprints.soton.ac.uk/id/eprint/252031
PURE UUID: c7b9099e-3911-4c59-90f1-9cfd2cb0ad6e
Catalogue record
Date deposited: 30 Nov 1999
Last modified: 07 Dec 2023 18:01
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Contributors
Author:
P Champ
Author:
N E B Cowern
Author:
D J Godfrey
Author:
A F Willoughby
Author:
A G R Evans
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