A model for boron diffusion in p+, n+ and lightly doped silicon


Champ, P, Cowern, N E B, Godfrey, D J, Willoughby, A F and Evans, A G R (1986) A model for boron diffusion in p+, n+ and lightly doped silicon

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Item Type: Other
Organisations: Nanoelectronics and Nanotechnology
ePrint ID: 252031
Date :
Date Event
September 1986Published
Date Deposited: 30 Nov 1999
Last Modified: 17 Apr 2017 23:38
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/252031

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