The University of Southampton
University of Southampton Institutional Repository

A model for boron diffusion in p+, n+ and lightly doped silicon

Champ, P, Cowern, N E B, Godfrey, D J, Willoughby, A F and Evans, A G R (1986) A model for boron diffusion in p+, n+ and lightly doped silicon

Record type: Other

Full text not available from this repository.

More information

Published date: September 1986
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 252031
URI: http://eprints.soton.ac.uk/id/eprint/252031
PURE UUID: c7b9099e-3911-4c59-90f1-9cfd2cb0ad6e

Catalogue record

Date deposited: 30 Nov 1999
Last modified: 18 Jul 2017 10:07

Export record

Contributors

Author: P Champ
Author: N E B Cowern
Author: D J Godfrey
Author: A F Willoughby
Author: A G R Evans

University divisions

Download statistics

Downloads from ePrints over the past year. Other digital versions may also be available to download e.g. from the publisher's website.

View more statistics

Atom RSS 1.0 RSS 2.0

Contact ePrints Soton: eprints@soton.ac.uk

ePrints Soton supports OAI 2.0 with a base URL of http://eprints.soton.ac.uk/cgi/oai2

This repository has been built using EPrints software, developed at the University of Southampton, but available to everyone to use.

We use cookies to ensure that we give you the best experience on our website. If you continue without changing your settings, we will assume that you are happy to receive cookies on the University of Southampton website.

×