A study of diffusion, clustering and defects in As+ and BF2+ implanted silicon during scanning electron beam annealing
A study of diffusion, clustering and defects in As+ and BF2+ implanted silicon during scanning electron beam annealing
Hart, M J
e4833057-eb19-44aa-9b1c-c86de054a920
Evans, A G R
c4a3f208-8fd9-491d-870f-ce7eef943311
Amaratunga, G A J
1167e3a3-ff00-4a7f-92a5-06a2f22c6b5f
Altrip, J L
17142133-bd7b-47ec-8fe7-42d39fad5f2b
1987
Hart, M J
e4833057-eb19-44aa-9b1c-c86de054a920
Evans, A G R
c4a3f208-8fd9-491d-870f-ce7eef943311
Amaratunga, G A J
1167e3a3-ff00-4a7f-92a5-06a2f22c6b5f
Altrip, J L
17142133-bd7b-47ec-8fe7-42d39fad5f2b
Hart, M J, Evans, A G R, Amaratunga, G A J and Altrip, J L
(1987)
A study of diffusion, clustering and defects in As+ and BF2+ implanted silicon during scanning electron beam annealing.
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Published date: 1987
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 252036
URI: http://eprints.soton.ac.uk/id/eprint/252036
PURE UUID: b001ea6d-b123-4594-96e3-683e4a9c59c8
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Date deposited: 30 Nov 1999
Last modified: 10 Dec 2021 20:24
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Contributors
Author:
M J Hart
Author:
A G R Evans
Author:
G A J Amaratunga
Author:
J L Altrip
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