Evaluation of damage to MOS devices fabricated on dry etched substrates
Evaluation of damage to MOS devices fabricated on dry etched substrates
950-950
Carter, J.C.
6a4e2120-5d03-4621-9ebc-ba8901e40e7a
Blackburn, A.
bcee4783-8ea6-45cf-9f19-219b6e846bab
Evans, A.G.R.
c4a3f208-8fd9-491d-870f-ce7eef943311
April 1988
Carter, J.C.
6a4e2120-5d03-4621-9ebc-ba8901e40e7a
Blackburn, A.
bcee4783-8ea6-45cf-9f19-219b6e846bab
Evans, A.G.R.
c4a3f208-8fd9-491d-870f-ce7eef943311
Carter, J.C., Blackburn, A. and Evans, A.G.R.
(1988)
Evaluation of damage to MOS devices fabricated on dry etched substrates.
Vacuum, .
(doi:10.1016/0042-207X(88)90524-6).
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Published date: April 1988
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 252042
URI: http://eprints.soton.ac.uk/id/eprint/252042
ISSN: 0042-207X
PURE UUID: 35ad0847-207a-4016-9b8d-02238e2ab17c
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Date deposited: 30 Nov 1999
Last modified: 17 Mar 2024 06:53
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Contributors
Author:
J.C. Carter
Author:
A. Blackburn
Author:
A.G.R. Evans
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