The University of Southampton
University of Southampton Institutional Repository

Evaluation of damage to MOS devices fabricated on dry etched substrates

Evaluation of damage to MOS devices fabricated on dry etched substrates
Evaluation of damage to MOS devices fabricated on dry etched substrates
0042-207X
950-950
Carter, J.C.
6a4e2120-5d03-4621-9ebc-ba8901e40e7a
Blackburn, A.
bcee4783-8ea6-45cf-9f19-219b6e846bab
Evans, A.G.R.
c4a3f208-8fd9-491d-870f-ce7eef943311
Carter, J.C.
6a4e2120-5d03-4621-9ebc-ba8901e40e7a
Blackburn, A.
bcee4783-8ea6-45cf-9f19-219b6e846bab
Evans, A.G.R.
c4a3f208-8fd9-491d-870f-ce7eef943311

Carter, J.C., Blackburn, A. and Evans, A.G.R. (1988) Evaluation of damage to MOS devices fabricated on dry etched substrates. Vacuum, 950-950. (doi:10.1016/0042-207X(88)90524-6).

Record type: Article

This record has no associated files available for download.

More information

Published date: April 1988
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 252042
URI: http://eprints.soton.ac.uk/id/eprint/252042
ISSN: 0042-207X
PURE UUID: 35ad0847-207a-4016-9b8d-02238e2ab17c

Catalogue record

Date deposited: 30 Nov 1999
Last modified: 17 Mar 2024 06:53

Export record

Altmetrics

Contributors

Author: J.C. Carter
Author: A. Blackburn
Author: A.G.R. Evans

Download statistics

Downloads from ePrints over the past year. Other digital versions may also be available to download e.g. from the publisher's website.

View more statistics

Atom RSS 1.0 RSS 2.0

Contact ePrints Soton: eprints@soton.ac.uk

ePrints Soton supports OAI 2.0 with a base URL of http://eprints.soton.ac.uk/cgi/oai2

This repository has been built using EPrints software, developed at the University of Southampton, but available to everyone to use.

We use cookies to ensure that we give you the best experience on our website. If you continue without changing your settings, we will assume that you are happy to receive cookies on the University of Southampton website.

×