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Observations of dislocations and junction irregularities in bipolar transistors using the EBIC mode of the SEM

Observations of dislocations and junction irregularities in bipolar transistors using the EBIC mode of the SEM
Observations of dislocations and junction irregularities in bipolar transistors using the EBIC mode of the SEM
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Bull, C J
335af99b-3f43-48cb-9f2d-dc59de534064
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Bull, C J
335af99b-3f43-48cb-9f2d-dc59de534064

Ashburn, P and Bull, C J (1979) Observations of dislocations and junction irregularities in bipolar transistors using the EBIC mode of the SEM.

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More information

Published date: 1979
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 252056
URI: http://eprints.soton.ac.uk/id/eprint/252056
PURE UUID: 4f1adfda-af18-4ed8-94e1-6832e875ec64

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Date deposited: 07 Dec 1999
Last modified: 10 Dec 2021 20:24

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Contributors

Author: P Ashburn
Author: C J Bull

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