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Effects of dislocations in silicon transistors with implanted emitters

Effects of dislocations in silicon transistors with implanted emitters
Effects of dislocations in silicon transistors with implanted emitters
Bull, C J
335af99b-3f43-48cb-9f2d-dc59de534064
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Booker, G R
1c5cd067-0dc6-4cd7-9e2c-9adf8ae291e9
Nicholas, K H
2ee857aa-59d4-49a4-adee-dd4bdb191dd6
Bull, C J
335af99b-3f43-48cb-9f2d-dc59de534064
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Booker, G R
1c5cd067-0dc6-4cd7-9e2c-9adf8ae291e9
Nicholas, K H
2ee857aa-59d4-49a4-adee-dd4bdb191dd6

Bull, C J, Ashburn, P, Booker, G R and Nicholas, K H (1979) Effects of dislocations in silicon transistors with implanted emitters.

Record type: Other

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More information

Published date: 1979
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 252058
URI: https://eprints.soton.ac.uk/id/eprint/252058
PURE UUID: e85554e5-7003-45d7-b6ee-9d643f481d73

Catalogue record

Date deposited: 07 Dec 1999
Last modified: 18 Jul 2017 10:07

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Contributors

Author: C J Bull
Author: P Ashburn
Author: G R Booker
Author: K H Nicholas

University divisions

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