Effects of dislocations in silicon transistors with implanted bases
Effects of dislocations in silicon transistors with implanted bases
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Bull, C J
335af99b-3f43-48cb-9f2d-dc59de534064
Nicholas, K H
2ee857aa-59d4-49a4-adee-dd4bdb191dd6
Booker, G R
1c5cd067-0dc6-4cd7-9e2c-9adf8ae291e9
1977
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Bull, C J
335af99b-3f43-48cb-9f2d-dc59de534064
Nicholas, K H
2ee857aa-59d4-49a4-adee-dd4bdb191dd6
Booker, G R
1c5cd067-0dc6-4cd7-9e2c-9adf8ae291e9
Ashburn, P, Bull, C J, Nicholas, K H and Booker, G R
(1977)
Effects of dislocations in silicon transistors with implanted bases.
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Published date: 1977
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 252059
URI: http://eprints.soton.ac.uk/id/eprint/252059
PURE UUID: 3a446139-e3f3-48c7-b917-437e24b6fee1
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Date deposited: 07 Dec 1999
Last modified: 10 Dec 2021 20:24
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Contributors
Author:
C J Bull
Author:
K H Nicholas
Author:
G R Booker
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