A theoretical and experimental study of recombination centres in silicon p-n junctions
A theoretical and experimental study of recombination centres in silicon p-n junctions
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Morgan, D V
c7658319-794f-4e20-9ad7-d2e7e37e956a
Howes, M J
fb34cba2-fffc-46ab-987e-0805b6ab78c9
1975
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Morgan, D V
c7658319-794f-4e20-9ad7-d2e7e37e956a
Howes, M J
fb34cba2-fffc-46ab-987e-0805b6ab78c9
Ashburn, P, Morgan, D V and Howes, M J
(1975)
A theoretical and experimental study of recombination centres in silicon p-n junctions.
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Published date: 1975
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 252061
URI: http://eprints.soton.ac.uk/id/eprint/252061
PURE UUID: 1b6740a7-a91a-45e4-bd6e-170cb3155d05
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Date deposited: 07 Dec 1999
Last modified: 10 Dec 2021 20:24
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Contributors
Author:
D V Morgan
Author:
M J Howes
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