A theoretical and experimental study of recombination centres in silicon p-n junctions


Ashburn, P, Morgan, D V and Howes, M J (1975) A theoretical and experimental study of recombination centres in silicon p-n junctions

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Item Type: Other
Organisations: Nanoelectronics and Nanotechnology
ePrint ID: 252061
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1975Published
Date Deposited: 07 Dec 1999
Last Modified: 17 Apr 2017 23:38
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/252061

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