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Generation-recombination of carriers in p-n junctions

Generation-recombination of carriers in p-n junctions
Generation-recombination of carriers in p-n junctions
In the letter, we present theoretical I/V characteristics of silicon diodes. Generation/recombination is included, and the variation of the I/V characteristics with trap density Ntt is noted. The differences between uniform and nonuniform distributions of recombination centres are discussed, and a comparison is made with previously published experimental results.
0013-5194
85 – 86
Morgan, D V
c7658319-794f-4e20-9ad7-d2e7e37e956a
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Morgan, D V
c7658319-794f-4e20-9ad7-d2e7e37e956a
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038

Morgan, D V and Ashburn, P (1974) Generation-recombination of carriers in p-n junctions. Electronics Letters, 10 (7), 85 – 86. (doi:10.1049/el:19740066).

Record type: Article

Abstract

In the letter, we present theoretical I/V characteristics of silicon diodes. Generation/recombination is included, and the variation of the I/V characteristics with trap density Ntt is noted. The differences between uniform and nonuniform distributions of recombination centres are discussed, and a comparison is made with previously published experimental results.

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More information

Published date: 1974
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 252063
URI: http://eprints.soton.ac.uk/id/eprint/252063
ISSN: 0013-5194
PURE UUID: 9824ad97-346b-43c1-9b5f-0d50704d3afa

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Date deposited: 07 Dec 1999
Last modified: 16 Mar 2024 22:47

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Contributors

Author: D V Morgan
Author: P Ashburn

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