Model for Phosphorus diffusion in silicon during rapid thermal annealing


Nanu, L and Evans, A G R (1988) Model for Phosphorus diffusion in silicon during rapid thermal annealing

Download

Full text not available from this repository.

Item Type: Other
Additional Information: Address: Nottingham
Organisations: Nanoelectronics and Nanotechnology
ePrint ID: 252066
Date :
Date Event
December 1988Published
Date Deposited: 09 Dec 1999
Last Modified: 17 Apr 2017 23:38
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/252066

Actions (login required)

View Item View Item