Increase of low frequency noise generating defects in today's CMOS/BiCMOS technologies

Murray, D.C., Siabi-Shahrivar, N., Evans, A.G.R., Redman-White, W., Carter, J.C. and Altrip, J.L. (1989) Increase of low frequency noise generating defects in today's CMOS/BiCMOS technologies. Materials Science and Engineering: B, 4 (1-4), 367-372. (doi:10.1016/0921-5107(89)90272-9).

Abstract

Defects present in semiconductor layers can lead to increased transistor low frequency noise. This paper reports on the noise performance degradation caused by modern complementary metal-oxide-semiconductor (CMOS) and bipolar-CMOS (BiCMOS) processing techniques, these being the rapid thermal annealing (RTA) of metal-oxide-semiconductor field effect transistors (MOSFETs) and the use of polysilicon emitters in bipolar transistors.

A rise in both the bulk and oxide defect densities was thought to be responsible for the increased noise of RTA MOSFETs over conventionally annealed devices. A significant low frequency noise component was discovered to be present in poly-silicon-emitter transistors. This was thought to be due to the presence of SiO2 at the polysilicon-single-crystal interface.

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