Towards the limit of Ion Implantation and rapid thermal annealing as a technique for shallow junction formation
Towards the limit of Ion Implantation and rapid thermal annealing as a technique for shallow junction formation
Altrip, J L
17142133-bd7b-47ec-8fe7-42d39fad5f2b
Evans, A G R
c4a3f208-8fd9-491d-870f-ce7eef943311
Logan, J R
e063eb71-9553-4776-b7a6-73a1e2c52003
Jeynes, C
838ab9ab-998e-4eb0-ab12-89fc97df3caf
1990
Altrip, J L
17142133-bd7b-47ec-8fe7-42d39fad5f2b
Evans, A G R
c4a3f208-8fd9-491d-870f-ce7eef943311
Logan, J R
e063eb71-9553-4776-b7a6-73a1e2c52003
Jeynes, C
838ab9ab-998e-4eb0-ab12-89fc97df3caf
Altrip, J L, Evans, A G R, Logan, J R and Jeynes, C
(1990)
Towards the limit of Ion Implantation and rapid thermal annealing as a technique for shallow junction formation.
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Published date: 1990
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 252074
URI: http://eprints.soton.ac.uk/id/eprint/252074
PURE UUID: 51a41126-be0a-415f-b10a-a8f26faf5efc
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Date deposited: 09 Dec 1999
Last modified: 10 Dec 2021 20:24
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Contributors
Author:
J L Altrip
Author:
A G R Evans
Author:
J R Logan
Author:
C Jeynes
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