The nature of Electrically inactive implanted arsenic in Silicon after rapid thermal annealing
The nature of Electrically inactive implanted arsenic in Silicon after rapid thermal annealing
Altrip, J L
17142133-bd7b-47ec-8fe7-42d39fad5f2b
Evans, A G R
c4a3f208-8fd9-491d-870f-ce7eef943311
Young, N D
ea8482f7-7f0a-4b9f-87e8-badea7087f96
Logan, J R
e063eb71-9553-4776-b7a6-73a1e2c52003
1991
Altrip, J L
17142133-bd7b-47ec-8fe7-42d39fad5f2b
Evans, A G R
c4a3f208-8fd9-491d-870f-ce7eef943311
Young, N D
ea8482f7-7f0a-4b9f-87e8-badea7087f96
Logan, J R
e063eb71-9553-4776-b7a6-73a1e2c52003
Altrip, J L, Evans, A G R, Young, N D and Logan, J R
(1991)
The nature of Electrically inactive implanted arsenic in Silicon after rapid thermal annealing.
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Published date: 1991
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 252244
URI: http://eprints.soton.ac.uk/id/eprint/252244
PURE UUID: 111c095f-6efd-442a-99a6-8315300137b5
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Date deposited: 07 Jan 2000
Last modified: 10 Dec 2021 20:26
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Contributors
Author:
J L Altrip
Author:
A G R Evans
Author:
N D Young
Author:
J R Logan
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