Submicron CMOS devices utilising selective epitaxial (SEG) of silicon using silane only
Submicron CMOS devices utilising selective epitaxial (SEG) of silicon using silane only
Afshar-Nanaii, N
93b74696-c262-4e90-b795-61442235494e
Evans, A G R
c4a3f208-8fd9-491d-870f-ce7eef943311
Starbuck, C M K
a85acc65-f4ee-46aa-a608-817d9993f8fd
September 1992
Afshar-Nanaii, N
93b74696-c262-4e90-b795-61442235494e
Evans, A G R
c4a3f208-8fd9-491d-870f-ce7eef943311
Starbuck, C M K
a85acc65-f4ee-46aa-a608-817d9993f8fd
Afshar-Nanaii, N, Evans, A G R and Starbuck, C M K
(1992)
Submicron CMOS devices utilising selective epitaxial (SEG) of silicon using silane only.
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Published date: September 1992
Additional Information:
ESSDERC. Address: Leuven
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 252246
URI: http://eprints.soton.ac.uk/id/eprint/252246
PURE UUID: 66df2c82-7962-4532-9040-bfcc0d32c93f
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Date deposited: 10 Jan 2000
Last modified: 07 Dec 2023 18:01
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Contributors
Author:
N Afshar-Nanaii
Author:
A G R Evans
Author:
C M K Starbuck
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