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Submicron CMOS devices utilising selective epitaxial (SEG) of silicon using silane only

Submicron CMOS devices utilising selective epitaxial (SEG) of silicon using silane only
Submicron CMOS devices utilising selective epitaxial (SEG) of silicon using silane only
IEEE
Afshar-Nanaii, N
93b74696-c262-4e90-b795-61442235494e
Evans, A G R
c4a3f208-8fd9-491d-870f-ce7eef943311
Starbuck, C M K
a85acc65-f4ee-46aa-a608-817d9993f8fd
Afshar-Nanaii, N
93b74696-c262-4e90-b795-61442235494e
Evans, A G R
c4a3f208-8fd9-491d-870f-ce7eef943311
Starbuck, C M K
a85acc65-f4ee-46aa-a608-817d9993f8fd

Afshar-Nanaii, N, Evans, A G R and Starbuck, C M K (1992) Submicron CMOS devices utilising selective epitaxial (SEG) of silicon using silane only.

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More information

Published date: September 1992
Additional Information: ESSDERC. Address: Leuven
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 252246
URI: http://eprints.soton.ac.uk/id/eprint/252246
PURE UUID: 66df2c82-7962-4532-9040-bfcc0d32c93f

Catalogue record

Date deposited: 10 Jan 2000
Last modified: 07 Dec 2023 18:01

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Contributors

Author: N Afshar-Nanaii
Author: A G R Evans
Author: C M K Starbuck

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