Regrowth Behaviour of Si 1 - x Gex/Si Structures formed by Ge+ Ion-Implantation and Post Amorphisation
Regrowth Behaviour of Si 1 - x Gex/Si Structures formed by Ge+ Ion-Implantation and Post Amorphisation
Zhang, J P
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Wilson, R J
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Hemment, P L F
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Claverie, A
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Cristiano, F
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Sallers, P
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Wen, J Q
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Evans, J H
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Peaker, A R
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Parker, G J
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1994
Zhang, J P
afcfbacb-deb8-4925-b742-0b97c292b780
Wilson, R J
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Hemment, P L F
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Claverie, A
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Cristiano, F
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Sallers, P
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Wen, J Q
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Evans, J H
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Peaker, A R
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Parker, G J
b140c5a5-94c4-44f3-95a3-c5054a9fe38d
Zhang, J P, Wilson, R J, Hemment, P L F, Claverie, A, Cristiano, F, Sallers, P, Wen, J Q, Evans, J H, Peaker, A R and Parker, G J
(1994)
Regrowth Behaviour of Si 1 - x Gex/Si Structures formed by Ge+ Ion-Implantation and Post Amorphisation.
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Published date: 1994
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 252426
URI: http://eprints.soton.ac.uk/id/eprint/252426
PURE UUID: 180c63de-80e6-4d17-9616-e1fe2d96727b
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Date deposited: 27 Jan 2000
Last modified: 10 Dec 2021 20:27
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Contributors
Author:
J P Zhang
Author:
R J Wilson
Author:
P L F Hemment
Author:
A Claverie
Author:
F Cristiano
Author:
P Sallers
Author:
J Q Wen
Author:
J H Evans
Author:
A R Peaker
Author:
G J Parker
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