Selective low pressure chemical vapour deposition epitaxy using silance only for advanced device applications


Parker, G J and Bonar, J M (1995) Selective low pressure chemical vapour deposition epitaxy using silance only for advanced device applications

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Item Type: Other
Organisations: Nanoelectronics and Nanotechnology
ePrint ID: 252427
Date :
Date Event
January 1995Published
Date Deposited: 27 Jan 2000
Last Modified: 17 Apr 2017 23:33
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/252427

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