Afshar-Nanaii, N, Peerlings, J, Evans, A G R and Carter, J C (1993) Reduction of hot-electron degradation in NMOSFETS with elevated sources and drains realised by SEG of silicon using silane only.
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Published date: 1993
Additional Information:
Address: Grenoble
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 252435
URI: http://eprints.soton.ac.uk/id/eprint/252435
PURE UUID: 325422e5-58a9-4947-ab97-1da4387d17c0
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Date deposited: 28 Jan 2000
Last modified: 10 Dec 2021 20:27
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Contributors
Author:
N Afshar-Nanaii
Author:
J Peerlings
Author:
A G R Evans
Author:
J C Carter
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