Reduction of hot-electron degradation in NMOSFETS with elevated sources and drains realised by SEG of silicon using silane only


Afshar-Nanaii, N, Peerlings, J, Evans, A G R and Carter, J C (1993) Reduction of hot-electron degradation in NMOSFETS with elevated sources and drains realised by SEG of silicon using silane only

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Item Type: Other
Additional Information: Address: Grenoble
Organisations: Nanoelectronics and Nanotechnology
ePrint ID: 252435
Date :
Date Event
1993Published
Date Deposited: 28 Jan 2000
Last Modified: 17 Apr 2017 23:33
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/252435

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