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Reduction of hot-electron degradation in NMOSFETS with elevated sources and drains realised by SEG of silicon using silane only

Afshar-Nanaii, N, Peerlings, J, Evans, A G R and Carter, J C (1993) Reduction of hot-electron degradation in NMOSFETS with elevated sources and drains realised by SEG of silicon using silane only

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Published date: 1993
Additional Information: Address: Grenoble
Organisations: Nanoelectronics and Nanotechnology

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Local EPrints ID: 252435
URI: http://eprints.soton.ac.uk/id/eprint/252435
PURE UUID: 325422e5-58a9-4947-ab97-1da4387d17c0

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Date deposited: 28 Jan 2000
Last modified: 18 Jul 2017 10:04

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Contributors

Author: N Afshar-Nanaii
Author: J Peerlings
Author: A G R Evans
Author: J C Carter

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