A study of Hall and field effect mobilities in a Si/Si0.8Ge0.2 p-channell MOS heterostructure


Lander, R J P, Emeleus, C J, Parker, E H C, Whall, T E, Kennedy, G P, Sidek, R and Evans, A G R (1995) A study of Hall and field effect mobilities in a Si/Si0.8Ge0.2 p-channell MOS heterostructure

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Description/Abstract

SSb.P44,

Item Type: Other
Additional Information: Address: Liverpool
Organisations: Nanoelectronics and Nanotechnology
ePrint ID: 252443
Date :
Date Event
December 1995Published
Date Deposited: 28 Jan 2000
Last Modified: 17 Apr 2017 23:33
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/252443

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