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A study of Hall and field effect mobilities in a Si/Si0.8Ge0.2 p-channell MOS heterostructure

Lander, R J P, Emeleus, C J, Parker, E H C, Whall, T E, Kennedy, G P, Sidek, R and Evans, A G R (1995) A study of Hall and field effect mobilities in a Si/Si0.8Ge0.2 p-channell MOS heterostructure

Record type: Other

Abstract

SSb.P44,

Full text not available from this repository.

More information

Published date: December 1995
Additional Information: Address: Liverpool
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 252443
URI: http://eprints.soton.ac.uk/id/eprint/252443
PURE UUID: 348f483a-2738-49bc-96c3-506f64820f9a

Catalogue record

Date deposited: 28 Jan 2000
Last modified: 18 Jul 2017 10:04

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Contributors

Author: R J P Lander
Author: C J Emeleus
Author: E H C Parker
Author: T E Whall
Author: G P Kennedy
Author: R Sidek
Author: A G R Evans

University divisions

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