Lander, R J P, Emeleus, C J, Parker, E H C, Whall, T E, Kennedy, G P, Sidek, R and Evans, A G R (1996) A study of Hall and field effect mobilities in a Si/Si0.8Ge0.2 p channel MOS heterostructure.
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Published date: April 1996
Additional Information:
MRS Spring 96 Meeting. Address: San Fransisco
Organisations:
Electronics & Computer Science
Identifiers
Local EPrints ID: 252444
URI: http://eprints.soton.ac.uk/id/eprint/252444
PURE UUID: d8b342c3-c4f1-45aa-85b7-ade2816a6c1f
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Date deposited: 28 Jan 2000
Last modified: 10 Dec 2021 20:27
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Contributors
Author:
R J P Lander
Author:
C J Emeleus
Author:
E H C Parker
Author:
T E Whall
Author:
G P Kennedy
Author:
R Sidek
Author:
A G R Evans
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