The University of Southampton
University of Southampton Institutional Repository

Effect of transistor geometry on the electrical characteristics of SiGe heterjunction bipolar transistors at low temperaturessn

Record type: Other

Full text not available from this repository.

Citation

Hashim, M D, Lever, R F, Ashburn, P and Parker, G J (1996) Effect of transistor geometry on the electrical characteristics of SiGe heterjunction bipolar transistors at low temperaturessn

More information

Published date: April 1996
Additional Information: Chapter: 3
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 252487
URI: http://eprints.soton.ac.uk/id/eprint/252487
PURE UUID: 303d849b-261f-481a-ad00-38e28c7003d3

Catalogue record

Date deposited: 31 Jan 2000
Last modified: 18 Jul 2017 10:04

Export record

Contributors

Author: M D Hashim
Author: R F Lever
Author: P Ashburn
Author: G J Parker

University divisions


Download statistics

Downloads from ePrints over the past year. Other digital versions may also be available to download e.g. from the publisher's website.

View more statistics

Atom RSS 1.0 RSS 2.0

Contact ePrints Soton: eprints@soton.ac.uk

ePrints Soton supports OAI 2.0 with a base URL of http://eprints.soton.ac.uk/cgi/oai2

This repository has been built using EPrints software, developed at the University of Southampton, but available to everyone to use.

We use cookies to ensure that we give you the best experience on our website. If you continue without changing your settings, we will assume that you are happy to receive cookies on the University of Southampton website.

×