Measurements of very long generation lifetimes in Si and SiGe epi-layers produced by LPCVD using MOS capacitors formed by plasma anodisation


Wu, Z Y, Hall, S, Bonar, J M and Parker, G J (1997) Measurements of very long generation lifetimes in Si and SiGe epi-layers produced by LPCVD using MOS capacitors formed by plasma anodisation

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Item Type: Other
Organisations: Nanoelectronics and Nanotechnology
ePrint ID: 252491
Date :
Date Event
May 1997Published
Date Deposited: 31 Jan 2000
Last Modified: 17 Apr 2017 23:33
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/252491

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