An improved technology for elevated source/drain MOSFETS
An improved technology for elevated source/drain MOSFETS
Waite, A M
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Evans, A G R
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Howard, D J
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Meyer, K De
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Caymax, M
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Kubicek, S
dcdb72c9-ca61-44cf-a174-cdb5be49f95a
1997
Waite, A M
d021f13b-f8dd-4398-89d1-bb9cf308072c
Evans, A G R
c4a3f208-8fd9-491d-870f-ce7eef943311
Howard, D J
c4052e6f-9262-43d4-91ee-69ebee46d23e
Meyer, K De
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Caymax, M
cd5426db-a104-4ffc-ae4b-1960823edc6e
Kubicek, S
dcdb72c9-ca61-44cf-a174-cdb5be49f95a
Waite, A M, Evans, A G R, Howard, D J, Meyer, K De, Caymax, M and Kubicek, S
(1997)
An improved technology for elevated source/drain MOSFETS.
In European Solid State Device Conference (ESSDERC) proceedings.
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Conference or Workshop Item
(Paper)
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More information
Published date: 1997
Additional Information:
Address: Stuttgart, Germany
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 252500
URI: http://eprints.soton.ac.uk/id/eprint/252500
PURE UUID: 2ff20033-86a3-48ab-9e54-897e6e642a89
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Date deposited: 07 Feb 2000
Last modified: 08 Jan 2022 08:54
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Contributors
Author:
A M Waite
Author:
A G R Evans
Author:
D J Howard
Author:
K De Meyer
Author:
M Caymax
Author:
S Kubicek
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