Electrical properties of in-situ phosphorus and boron doped polycrystalline SiGeC films
Electrical properties of in-situ phosphorus and boron doped polycrystalline SiGeC films
The sheet resistance, effective carrier concentration and Hall mobility of in-situ boron and phosphorus doped polycrystalline SiGeC films are presented for carbon contents between 0 and 4%. Phosphorus and boron doping levels of 4E19 and 2E20 cm-3 were achieved for the n- and p-type layers respectively and remained largely unaffected by carbon content. The phosphorus doped films showed a dramatic increase in sheet resistivity and a corresponding drop in effective concentration and Hall mobility. In contrast, the boron doped layers showed only a minor increase in resistivity. This is attributed to interstitial carbon increasing the defect density and also shifting the defect energy levels at the grain boundaries towards the valence band. This causes an increase in the grain boundary energy barrier in n-type layers, but leaves the p-type layers largely unaffected.
561-563
Anteney, I M
c624f602-fd9f-422a-84ad-afb2e0d89131
Parker, G J
b140c5a5-94c4-44f3-95a3-c5054a9fe38d
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Kemhadjian, H A
a60ec87d-ecf4-4417-928f-2f9b5918242b
April 2000
Anteney, I M
c624f602-fd9f-422a-84ad-afb2e0d89131
Parker, G J
b140c5a5-94c4-44f3-95a3-c5054a9fe38d
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Kemhadjian, H A
a60ec87d-ecf4-4417-928f-2f9b5918242b
Anteney, I M, Parker, G J, Ashburn, P and Kemhadjian, H A
(2000)
Electrical properties of in-situ phosphorus and boron doped polycrystalline SiGeC films.
Applied Physics Letters, 77 (4), .
Abstract
The sheet resistance, effective carrier concentration and Hall mobility of in-situ boron and phosphorus doped polycrystalline SiGeC films are presented for carbon contents between 0 and 4%. Phosphorus and boron doping levels of 4E19 and 2E20 cm-3 were achieved for the n- and p-type layers respectively and remained largely unaffected by carbon content. The phosphorus doped films showed a dramatic increase in sheet resistivity and a corresponding drop in effective concentration and Hall mobility. In contrast, the boron doped layers showed only a minor increase in resistivity. This is attributed to interstitial carbon increasing the defect density and also shifting the defect energy levels at the grain boundaries towards the valence band. This causes an increase in the grain boundary energy barrier in n-type layers, but leaves the p-type layers largely unaffected.
Text
2000_Anteney_APL_poly_SiGeC.pdf
- Other
More information
Published date: April 2000
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 252553
URI: http://eprints.soton.ac.uk/id/eprint/252553
ISSN: 0003-6951
PURE UUID: 647db86c-3a29-4038-82ac-2c793c5ba205
Catalogue record
Date deposited: 06 Jan 2004
Last modified: 14 Mar 2024 05:19
Export record
Contributors
Author:
I M Anteney
Author:
G J Parker
Author:
H A Kemhadjian
Download statistics
Downloads from ePrints over the past year. Other digital versions may also be available to download e.g. from the publisher's website.
View more statistics