The University of Southampton
University of Southampton Institutional Repository

Electrical properties of in-situ phosphorus and boron doped polycrystalline SiGeC films

Electrical properties of in-situ phosphorus and boron doped polycrystalline SiGeC films
Electrical properties of in-situ phosphorus and boron doped polycrystalline SiGeC films
The sheet resistance, effective carrier concentration and Hall mobility of in-situ boron and phosphorus doped polycrystalline SiGeC films are presented for carbon contents between 0 and 4%. Phosphorus and boron doping levels of 4E19 and 2E20 cm-3 were achieved for the n- and p-type layers respectively and remained largely unaffected by carbon content. The phosphorus doped films showed a dramatic increase in sheet resistivity and a corresponding drop in effective concentration and Hall mobility. In contrast, the boron doped layers showed only a minor increase in resistivity. This is attributed to interstitial carbon increasing the defect density and also shifting the defect energy levels at the grain boundaries towards the valence band. This causes an increase in the grain boundary energy barrier in n-type layers, but leaves the p-type layers largely unaffected.
0003-6951
561-563
Anteney, I M
c624f602-fd9f-422a-84ad-afb2e0d89131
Parker, G J
b140c5a5-94c4-44f3-95a3-c5054a9fe38d
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Kemhadjian, H A
a60ec87d-ecf4-4417-928f-2f9b5918242b
Anteney, I M
c624f602-fd9f-422a-84ad-afb2e0d89131
Parker, G J
b140c5a5-94c4-44f3-95a3-c5054a9fe38d
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Kemhadjian, H A
a60ec87d-ecf4-4417-928f-2f9b5918242b

Anteney, I M, Parker, G J, Ashburn, P and Kemhadjian, H A (2000) Electrical properties of in-situ phosphorus and boron doped polycrystalline SiGeC films. Applied Physics Letters, 77 (4), 561-563.

Record type: Article

Abstract

The sheet resistance, effective carrier concentration and Hall mobility of in-situ boron and phosphorus doped polycrystalline SiGeC films are presented for carbon contents between 0 and 4%. Phosphorus and boron doping levels of 4E19 and 2E20 cm-3 were achieved for the n- and p-type layers respectively and remained largely unaffected by carbon content. The phosphorus doped films showed a dramatic increase in sheet resistivity and a corresponding drop in effective concentration and Hall mobility. In contrast, the boron doped layers showed only a minor increase in resistivity. This is attributed to interstitial carbon increasing the defect density and also shifting the defect energy levels at the grain boundaries towards the valence band. This causes an increase in the grain boundary energy barrier in n-type layers, but leaves the p-type layers largely unaffected.

Text
2000_Anteney_APL_poly_SiGeC.pdf - Other
Download (46kB)

More information

Published date: April 2000
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 252553
URI: http://eprints.soton.ac.uk/id/eprint/252553
ISSN: 0003-6951
PURE UUID: 647db86c-3a29-4038-82ac-2c793c5ba205

Catalogue record

Date deposited: 06 Jan 2004
Last modified: 14 Mar 2024 05:19

Export record

Contributors

Author: I M Anteney
Author: G J Parker
Author: P Ashburn
Author: H A Kemhadjian

Download statistics

Downloads from ePrints over the past year. Other digital versions may also be available to download e.g. from the publisher's website.

View more statistics

Atom RSS 1.0 RSS 2.0

Contact ePrints Soton: eprints@soton.ac.uk

ePrints Soton supports OAI 2.0 with a base URL of http://eprints.soton.ac.uk/cgi/oai2

This repository has been built using EPrints software, developed at the University of Southampton, but available to everyone to use.

We use cookies to ensure that we give you the best experience on our website. If you continue without changing your settings, we will assume that you are happy to receive cookies on the University of Southampton website.

×