Comment on ‘‘Vertical‐cavity stimulated emission from photopumped InGaN/GaN heterojunctions at room temperature’’ [Appl. Phys. Lett. 65, 520 (1994)]
Comment on ‘‘Vertical‐cavity stimulated emission from photopumped InGaN/GaN heterojunctions at room temperature’’ [Appl. Phys. Lett. 65, 520 (1994)]
3197
Bagnall, D.M.
5d84abc8-77e5-43f7-97cb-e28533f25ef1
O'Donnell, K.P.
99233592-d94a-450e-b7bd-7608cb39e1bf
27 May 1996
Bagnall, D.M.
5d84abc8-77e5-43f7-97cb-e28533f25ef1
O'Donnell, K.P.
99233592-d94a-450e-b7bd-7608cb39e1bf
Bagnall, D.M. and O'Donnell, K.P.
(1996)
Comment on ‘‘Vertical‐cavity stimulated emission from photopumped InGaN/GaN heterojunctions at room temperature’’ [Appl. Phys. Lett. 65, 520 (1994)].
Applied Physics Letters, 68 (22), .
(doi:10.1063/1.116057).
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Published date: 27 May 1996
Organisations:
Nanoelectronics and Nanotechnology
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Local EPrints ID: 252584
URI: http://eprints.soton.ac.uk/id/eprint/252584
ISSN: 0003-6951
PURE UUID: 0a15eff1-4380-4b77-bf69-99c438b1fe9f
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Date deposited: 22 Feb 2000
Last modified: 15 Mar 2024 23:27
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Author:
D.M. Bagnall
Author:
K.P. O'Donnell
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