High temperature stimulated emission of ZnO grown by plasma assisted molecular beam epitaxy
High temperature stimulated emission of ZnO grown by plasma assisted molecular beam epitaxy
Bagnall, D M
5d84abc8-77e5-43f7-97cb-e28533f25ef1
Chen, Y F
ba3a9015-7b86-4416-8eb6-e2e34d5958cd
Zhu, Z
b77233e8-a577-464d-be51-a68c1085bca8
Yao, T
70314a7b-b41c-43b6-85de-e6487f33ba1f
Shen, M Y
888901e6-dda2-4cfa-b83a-7f87c8cf80b4
Goto, T
2f46c4ca-36d1-4d6e-b64c-1fe85a112b11
1997
Bagnall, D M
5d84abc8-77e5-43f7-97cb-e28533f25ef1
Chen, Y F
ba3a9015-7b86-4416-8eb6-e2e34d5958cd
Zhu, Z
b77233e8-a577-464d-be51-a68c1085bca8
Yao, T
70314a7b-b41c-43b6-85de-e6487f33ba1f
Shen, M Y
888901e6-dda2-4cfa-b83a-7f87c8cf80b4
Goto, T
2f46c4ca-36d1-4d6e-b64c-1fe85a112b11
Bagnall, D M, Chen, Y F, Zhu, Z, Yao, T, Shen, M Y and Goto, T
(1997)
High temperature stimulated emission of ZnO grown by plasma assisted molecular beam epitaxy.
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Published date: 1997
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 252606
URI: http://eprints.soton.ac.uk/id/eprint/252606
PURE UUID: 5fdb0091-8130-4d28-ba23-e4bbd52fc69d
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Date deposited: 23 Feb 2000
Last modified: 26 Apr 2022 22:11
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Contributors
Author:
D M Bagnall
Author:
Y F Chen
Author:
Z Zhu
Author:
T Yao
Author:
M Y Shen
Author:
T Goto
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