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Visible photonic bandgap engineering in silicon nitride waveguides

Visible photonic bandgap engineering in silicon nitride waveguides
Visible photonic bandgap engineering in silicon nitride waveguides
We demonstrate experimentally the tuning of complete photonic band gaps in patterned silicon nitride waveguides. Transmission measurements were performed using an ultrabroadband high-brightness white light laser continuum, extracting extinction ratios as low as 10–4 in the gap regions. Angle-resolved measurements show the perfect alignment of the gap around the Γ-J direction.
0003-6951
991-993
Netti, M.C.
e565f0dc-9641-4f19-a536-f1c1f01ea0dd
Charlton, M.D.B.
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Parker, G.J.
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Baumberg, J.J.
78e1ea7e-8c70-404c-bf84-59aafe75cd07
Netti, M.C.
e565f0dc-9641-4f19-a536-f1c1f01ea0dd
Charlton, M.D.B.
fcf86ab0-8f34-411a-b576-4f684e51e274
Parker, G.J.
0be0b760-c634-410d-adf6-076c6636be7e
Baumberg, J.J.
78e1ea7e-8c70-404c-bf84-59aafe75cd07

Netti, M.C., Charlton, M.D.B., Parker, G.J. and Baumberg, J.J. (2000) Visible photonic bandgap engineering in silicon nitride waveguides. Applied Physics Letters, 76 (8), 991-993. (doi:10.1063/1.125916).

Record type: Article

Abstract

We demonstrate experimentally the tuning of complete photonic band gaps in patterned silicon nitride waveguides. Transmission measurements were performed using an ultrabroadband high-brightness white light laser continuum, extracting extinction ratios as low as 10–4 in the gap regions. Angle-resolved measurements show the perfect alignment of the gap around the Γ-J direction.

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Published date: February 2000
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Organisations: Nanoelectronics and Nanotechnology
Learn more about Physics & Astronomy research

Identifiers

Local EPrints ID: 252652
URI: http://eprints.soton.ac.uk/id/eprint/252652
DOI: doi:10.1063/1.125916
ISSN: 0003-6951
PURE UUID: 3f61b0e7-2682-43ff-b605-999a0d11d820

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Date deposited: 09 Mar 2000
Last modified: 27 Apr 2022 06:58

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Contributors

Author: M.C. Netti
Author: M.D.B. Charlton
Author: G.J. Parker
Author: J.J. Baumberg

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