Non equilibrium effects during RTA of Boron and Arsenic implants in silicon
Non equilibrium effects during RTA of Boron and Arsenic implants in silicon
Hart, M J
e4833057-eb19-44aa-9b1c-c86de054a920
Evans, A G R
c4a3f208-8fd9-491d-870f-ce7eef943311
Amaratunga, G A J
1167e3a3-ff00-4a7f-92a5-06a2f22c6b5f
1986
Hart, M J
e4833057-eb19-44aa-9b1c-c86de054a920
Evans, A G R
c4a3f208-8fd9-491d-870f-ce7eef943311
Amaratunga, G A J
1167e3a3-ff00-4a7f-92a5-06a2f22c6b5f
Hart, M J, Evans, A G R and Amaratunga, G A J
(1986)
Non equilibrium effects during RTA of Boron and Arsenic implants in silicon.
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Published date: 1986
Additional Information:
Alvey Club meeting on process and Device Modelling. Address: Edinburgh
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 252672
URI: http://eprints.soton.ac.uk/id/eprint/252672
PURE UUID: 7ccb98ec-09c0-4a4b-af8a-606a6de5de9f
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Date deposited: 10 Mar 2000
Last modified: 10 Dec 2021 20:28
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Contributors
Author:
M J Hart
Author:
A G R Evans
Author:
G A J Amaratunga
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