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Non equilibrium effects during RTA of Boron and Arsenic implants in silicon

Hart, M J, Evans, A G R and Amaratunga, G A J (1986) Non equilibrium effects during RTA of Boron and Arsenic implants in silicon

Record type: Other

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Published date: 1986
Additional Information: Alvey Club meeting on process and Device Modelling. Address: Edinburgh
Organisations: Nanoelectronics and Nanotechnology

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Local EPrints ID: 252672
URI: http://eprints.soton.ac.uk/id/eprint/252672
PURE UUID: 7ccb98ec-09c0-4a4b-af8a-606a6de5de9f

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Date deposited: 10 Mar 2000
Last modified: 18 Jul 2017 10:02

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Contributors

Author: M J Hart
Author: A G R Evans
Author: G A J Amaratunga

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