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Non equilibrium effects during RTA of Boron and Arsenic implants in silicon

Non equilibrium effects during RTA of Boron and Arsenic implants in silicon
Non equilibrium effects during RTA of Boron and Arsenic implants in silicon
Hart, M J
e4833057-eb19-44aa-9b1c-c86de054a920
Evans, A G R
c4a3f208-8fd9-491d-870f-ce7eef943311
Amaratunga, G A J
1167e3a3-ff00-4a7f-92a5-06a2f22c6b5f
Hart, M J
e4833057-eb19-44aa-9b1c-c86de054a920
Evans, A G R
c4a3f208-8fd9-491d-870f-ce7eef943311
Amaratunga, G A J
1167e3a3-ff00-4a7f-92a5-06a2f22c6b5f

Hart, M J, Evans, A G R and Amaratunga, G A J (1986) Non equilibrium effects during RTA of Boron and Arsenic implants in silicon.

Record type: Other

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More information

Published date: 1986
Additional Information: Alvey Club meeting on process and Device Modelling. Address: Edinburgh
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 252672
URI: https://eprints.soton.ac.uk/id/eprint/252672
PURE UUID: 7ccb98ec-09c0-4a4b-af8a-606a6de5de9f

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Date deposited: 10 Mar 2000
Last modified: 18 Jul 2017 10:02

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