Si0.64 Ge0.36/Si Heterojunction MOSFETs: design, fabrication and evaluation
Si0.64 Ge0.36/Si Heterojunction MOSFETs: design, fabrication and evaluation
Incorporation of pseudomorphic SiGe layers into Si CMOS has prospects of improving the hole channel mobility to match that of the bulk silicon electron channel. Current 0.25 µm MOS technologies require sheet densities around 1013 cm-2. This requires a Si capping layer thickness of ~ 2nm between the Si0.64 Ge0.36 channel and the gate oxide.
Braithwaite, G.
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Grasby, T.J.
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Palmer, M.J.
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Prest, M.J.
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Parry, C.P.
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Whall, T.E.
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Parker, E.H.C.
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Waite, A.M.
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Evans, A.G.R.
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Roy, S.
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Asenov, A.
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September 1999
Braithwaite, G.
e398b9b0-9923-47a4-803e-f64d204f4e69
Grasby, T.J.
d39df2d0-9fa3-40ac-afa6-8c0ea15c1e15
Palmer, M.J.
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Prest, M.J.
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Parry, C.P.
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Whall, T.E.
875dbadb-3f0d-4706-8496-19c5ab15e162
Parker, E.H.C.
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Waite, A.M.
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Evans, A.G.R.
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Roy, S.
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Asenov, A.
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Braithwaite, G., Grasby, T.J., Palmer, M.J., Prest, M.J., Parry, C.P., Whall, T.E., Parker, E.H.C., Waite, A.M., Evans, A.G.R., Roy, S. and Asenov, A.
(1999)
Si0.64 Ge0.36/Si Heterojunction MOSFETs: design, fabrication and evaluation.
International Joint Conference on Silicon Epitaxy and Heterostructures (IJC-Si) (Si-MBE8) (Si-HS3), Research Institute of Electrical Communication, Tohoku, Japan.
Record type:
Conference or Workshop Item
(Paper)
Abstract
Incorporation of pseudomorphic SiGe layers into Si CMOS has prospects of improving the hole channel mobility to match that of the bulk silicon electron channel. Current 0.25 µm MOS technologies require sheet densities around 1013 cm-2. This requires a Si capping layer thickness of ~ 2nm between the Si0.64 Ge0.36 channel and the gate oxide.
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Published date: September 1999
Additional Information:
International Joint Conference on Silicon Epitaxy and Heterostructures (IJC-Si) (Si-MBE8) (Si-HS3). Organisation: Research Institute of Electrical Communication, Tohoku University
Venue - Dates:
International Joint Conference on Silicon Epitaxy and Heterostructures (IJC-Si) (Si-MBE8) (Si-HS3), Research Institute of Electrical Communication, Tohoku, Japan, 1999-08-31
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 252697
URI: http://eprints.soton.ac.uk/id/eprint/252697
PURE UUID: 683bdd32-4db6-47d5-a1f8-5653a5357415
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Date deposited: 09 May 2000
Last modified: 12 Dec 2021 01:16
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Contributors
Author:
G. Braithwaite
Author:
T.J. Grasby
Author:
M.J. Palmer
Author:
M.J. Prest
Author:
C.P. Parry
Author:
T.E. Whall
Author:
E.H.C. Parker
Author:
A.M. Waite
Author:
A.G.R. Evans
Author:
S. Roy
Author:
A. Asenov
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