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Loss Measurements for β-SiC on insulator waveguides for high speed silicon based photonic devices

Loss Measurements for β-SiC on insulator waveguides for high speed silicon based photonic devices
Loss Measurements for β-SiC on insulator waveguides for high speed silicon based photonic devices
In this work planar planar β-SiC-on-insulator waveguides were investigated. The waveguides were fabricated by two different methods. In the first a technological process similar to that of SIMOX was used, and therefore a buried SiO2 layer was formed by high energy ion implantation of oxygen in SiC/Si wafers. For the second type of waveguides we used heteroepitaxy of SiC on SOI (SIMOX). The losses have been measured at 0.633, 1.3 and 1.55 µm in both TE and TM polarization. A detailed analysis of the different loss mechanisms is presented. These types of waveguides have potential for high-speed silicon-based photonic devices compatible with silicon technology.
SPIE
Vonsovici, A.
a400a2ee-0560-40e0-8d7f-648d18ecbbdf
Reed, G.T.
ca08dd60-c072-4d7d-b254-75714d570139
Evans, A.G.R
9d0eefdf-55ab-4d65-b942-b7375bf20e5d
Namavar, F.
fd69b8a1-d26a-441e-bb4e-8206e2b93ad0
Houghton, Derek
Fitzgerald, Eugene
Vonsovici, A.
a400a2ee-0560-40e0-8d7f-648d18ecbbdf
Reed, G.T.
ca08dd60-c072-4d7d-b254-75714d570139
Evans, A.G.R
9d0eefdf-55ab-4d65-b942-b7375bf20e5d
Namavar, F.
fd69b8a1-d26a-441e-bb4e-8206e2b93ad0
Houghton, Derek
Fitzgerald, Eugene

Vonsovici, A., Reed, G.T., Evans, A.G.R and Namavar, F. (1999) Loss Measurements for β-SiC on insulator waveguides for high speed silicon based photonic devices. Houghton, Derek and Fitzgerald, Eugene (eds.) In Silicon-based Optoelectronics: OPTOELECTRONICS '99 - INTEGRATED OPTOELECTRONIC DEVICES. vol. 3630, SPIE. 10 pp . (doi:10.1117/12.342797).

Record type: Conference or Workshop Item (Paper)

Abstract

In this work planar planar β-SiC-on-insulator waveguides were investigated. The waveguides were fabricated by two different methods. In the first a technological process similar to that of SIMOX was used, and therefore a buried SiO2 layer was formed by high energy ion implantation of oxygen in SiC/Si wafers. For the second type of waveguides we used heteroepitaxy of SiC on SOI (SIMOX). The losses have been measured at 0.633, 1.3 and 1.55 µm in both TE and TM polarization. A detailed analysis of the different loss mechanisms is presented. These types of waveguides have potential for high-speed silicon-based photonic devices compatible with silicon technology.

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Published date: 19 March 1999
Additional Information: SPIE Proceedings 3630 "Silicon-based Optoelectronics" San Jose, Mar 1999
Organisations: Electronics & Computer Science

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Local EPrints ID: 252701
URI: https://eprints.soton.ac.uk/id/eprint/252701
PURE UUID: 66040046-429c-4b5e-8b3c-49bb3de022ca

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Date deposited: 15 Mar 2000
Last modified: 05 Oct 2018 11:37

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Contributors

Author: A. Vonsovici
Author: G.T. Reed
Author: A.G.R Evans
Author: F. Namavar
Editor: Derek Houghton
Editor: Eugene Fitzgerald

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