Loss Measurements for β-SiC on insulator waveguides for high speed silicon based photonic devices

Vonsovici, A., Reed, G.T., Evans, A.G.R and Namavar, F. (1999) Loss Measurements for β-SiC on insulator waveguides for high speed silicon based photonic devices. Houghton, Derek and Fitzgerald, Eugene (eds.) In Silicon-based Optoelectronics: OPTOELECTRONICS '99 - INTEGRATED OPTOELECTRONIC DEVICES. vol. 3630, SPIE. 10 pp . (doi:10.1117/12.342797).

Abstract

In this work planar planar β-SiC-on-insulator waveguides were investigated. The waveguides were fabricated by two different methods. In the first a technological process similar to that of SIMOX was used, and therefore a buried SiO₂ layer was formed by high energy ion implantation of oxygen in SiC/Si wafers. For the second type of waveguides we used heteroepitaxy of SiC on SOI (SIMOX). The losses have been measured at 0.633, 1.3 and 1.55 µm in both TE and TM polarization. A detailed analysis of the different loss mechanisms is presented. These types of waveguides have potential for high-speed silicon-based photonic devices compatible with silicon technology.

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